smd type transistors 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 2SD2150 features low v ce(sat) . excellent dc current gain characteristics. npn silicon transistor. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6v collector current i c 3a collector power dissipation p c 0.5 w junction temperature tj 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =50a 40 v collector-emitter breakdown voltage bv ceo i c =1ma 20 v emitter-base breakdown voltage bv ebo i e =50a 6 v collector cutoff current i cbo v cb =30v 0.1 a emitter cutoff current i ebo v eb =5v 0.1 a collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.1a 0.2 0.5 v dc current transfer ratio h fe v ce =2v, i c =0.1a 180 560 output capacitance f t v ce =2v, i e = -0.5a, f=100mhz 290 mhz transition frequency c ob v cb =10v, i e =0a, f=1mhz 25 pf h fe classification marking rank r s hfe 180 390 270 560 cf 1 2 3 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type ic smd type smd type smd type product specification 4008-318-123
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